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  4. Design of Monolayer MoS2Nanosheet Transistors for Low-Power Applications
 
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Design of Monolayer MoS2Nanosheet Transistors for Low-Power Applications

Journal
IEEE Transactions on Electron Devices
Journal Volume
69
Journal Issue
1
Pages
358-363
Date Issued
2022
Author(s)
Chen P.-F
Chen E
YUH-RENN WU  
DOI
10.1109/TED.2021.3130840
URI
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85121374518&doi=10.1109%2fTED.2021.3130840&partnerID=40&md5=68fc8d28bd67a567da02ee9a74370b6a
https://scholars.lib.ntu.edu.tw/handle/123456789/607375
Abstract
This study simulates and compares symmetric and asymmetric MoS2 nanosheet transistor structures. The results show that the asymmetric MoS2 nanosheet transistor achieves higher current density and better gate control, and thus, this structure is optimized to meet the current density requirement for low-power applications in the International Roadmap for Devices and Systems (IRDS). Dielectric materials of Al2O3 and HfO2 are investigated, and equivalent oxide thicknesses ranging from 0.8 to 2 nm are analyzed. Transistors with Al2O3 as the dielectric exhibit better performance than those with HfO2 due to the lower level of remote phonon scattering. The gate length and underlap region are scaled down from 14 to 5 nm and from 7 to 1 nm, respectively, in an attempt to further enhance the ON-current. The substoichiometric metal oxide AlOx is used to induce more electrons in the undoped MoS2 channel. AlOx increases the ON-current with no gate control degradation. After optimization, the transistor demonstrates a subthreshold swing of 62.3 mV/dec, a drain-induced barrier lowering (DIBL) of 21.6 mV/dec, and a current density of $495 ~\mu \text{A}/\mu \text{m}$ with a supply voltage of 0.65 V. Compared with Si gate-all-around transistors, the MoS2 nanosheet transistor exhibits excellent gate control, good electrostatics, and comparable current density. ? 1963-2012 IEEE.
Subjects
International Roadmap for Devices and Systems (IRDS)
MoS?
nanosheet transistor
Aluminum compounds
Current density
Dielectric materials
Drain current
Hafnium oxides
Metals
Monte Carlo methods
Phonons
Transistors
'current
Devices and systems
Gate control
International roadmap for device and system
Low power application
MonteCarlo methods
MoS₂
Nanosheet transistor.
Roadmap
Symmetrics
Nanosheets
Type
journal article

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