https://scholars.lib.ntu.edu.tw/handle/123456789/607375
標題: | Design of Monolayer MoS2Nanosheet Transistors for Low-Power Applications | 作者: | Chen P.-F Chen E Wu Y.-R. YUH-RENN WU |
關鍵字: | International Roadmap for Devices and Systems (IRDS);MoS?;nanosheet transistor;Aluminum compounds;Current density;Dielectric materials;Drain current;Hafnium oxides;Metals;Monte Carlo methods;Phonons;Transistors;'current;Devices and systems;Gate control;International roadmap for device and system;Low power application;MonteCarlo methods;MoS₂Nanosheet transistor.;Roadmap;Symmetrics;Nanosheets | 公開日期: | 2022 | 卷: | 69 | 期: | 1 | 起(迄)頁: | 358-363 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | This study simulates and compares symmetric and asymmetric MoS2 nanosheet transistor structures. The results show that the asymmetric MoS2 nanosheet transistor achieves higher current density and better gate control, and thus, this structure is optimized to meet the current density requirement for low-power applications in the International Roadmap for Devices and Systems (IRDS). Dielectric materials of Al2O3 and HfO2 are investigated, and equivalent oxide thicknesses ranging from 0.8 to 2 nm are analyzed. Transistors with Al2O3 as the dielectric exhibit better performance than those with HfO2 due to the lower level of remote phonon scattering. The gate length and underlap region are scaled down from 14 to 5 nm and from 7 to 1 nm, respectively, in an attempt to further enhance the ON-current. The substoichiometric metal oxide AlOx is used to induce more electrons in the undoped MoS2 channel. AlOx increases the ON-current with no gate control degradation. After optimization, the transistor demonstrates a subthreshold swing of 62.3 mV/dec, a drain-induced barrier lowering (DIBL) of 21.6 mV/dec, and a current density of $495 ~\mu \text{A}/\mu \text{m}$ with a supply voltage of 0.65 V. Compared with Si gate-all-around transistors, the MoS2 nanosheet transistor exhibits excellent gate control, good electrostatics, and comparable current density. ? 1963-2012 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85121374518&doi=10.1109%2fTED.2021.3130840&partnerID=40&md5=68fc8d28bd67a567da02ee9a74370b6a https://scholars.lib.ntu.edu.tw/handle/123456789/607375 |
ISSN: | 00189383 | DOI: | 10.1109/TED.2021.3130840 |
顯示於: | 電機工程學系 |
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