Two-domain formation during the epitaxial growth of GaN (0001) on c-plane Al 2O 3 (0001) by high power impulse magnetron sputtering
Journal
Journal of Applied Physics
Journal Volume
110
Journal Issue
12
Date Issued
2011
Author(s)
Junaid, M.
Lundin, D.
Palisaitis, J.
Hsiao, C.-L.
Darakchieva, V.
Jensen, J.
Persson, P.O.Å.
Sandström, P.
Lai, W.-J.
Chen, K.-H.
Helmersson, U.
Hultman, L.
Birch, J.
Publisher
American Institute of Physics
Type
journal article