High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures

Journal

IEEE Electron Device Letters

Journal Volume

29

Journal Issue

2

Pages

158-160

Date Issued

2008

Author(s)

Shi, J.-W.

Sheu, J.-K.

Chen, C.-H.

Lin, G.-R.

DOI

10.1109/LED.2007.914070

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/499999

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-39549121046&doi=10.1109%2fLED.2007.914070&partnerID=40&md5=ae6b18bbc6c3bddd13f36cd05bc71838

SDGs

[SDGs]SDG7

Type

journal article