High-speed GaN-based green light-emitting diodes with partially n-doped active layers and current-confined apertures
Journal
IEEE Electron Device Letters
Journal Volume
29
Journal Issue
2
Pages
158-160
Date Issued
2008
Author(s)
Abstract
We demonstrate a high-speed GaN-based green light-emitting diode for plastic optical fiber (POF) communication applications. By using a combination of n-type doping and undoped Inx Ga1-x N/GaN based multiple quantum wells (MQWs), and a 76-μm-diameter current-confined aperture structure, we can obtain an extremely high electrical-to-optical (E-O) 3 dB bandwidth ∼330 MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (∼264 μW) can be simultaneously achieved for a 2 mm in diameter POF with a 0.5 numerical aperture (NA). © 2008 IEEE.
SDGs
Type
journal article