High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectrics

Lin, T.D.; Chiu, H.C.; Chang, P.; Tung, L.T.; Chen, C.P.; MINGHWEI HONG; Kwo, J.; Tsai, W.; Wang, Y.C.; Lin, T.D.;Chiu, H.C.;Chang, P.;Tung, L.T.;Chen, C.P.;Hong, M.;Kwo, J.;Tsai, W.;Wang, Y.C.

doi:10.1063/1.2956393

High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectrics

Journal

Applied Physics Letters

Journal Volume

93

Journal Issue

3

Date Issued

2008

Author(s)

Lin, T.D.

Chiu, H.C.

Chang, P.

Tung, L.T.

Chen, C.P.

MINGHWEI HONG

Kwo, J.

Tsai, W.

Wang, Y.C.

DOI

10.1063/1.2956393

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443417

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-48249114071&doi=10.1063%2f1.2956393&partnerID=40&md5=40e09a11fefa0523f874ef6116fa1ef6

Abstract

Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) using ultrahigh-vacuum deposited Al2O3∕Ga2O3(Gd2O3) (GGO) dual-layer dielectrics and a TiN metal gate were fabricated. For a In0.53Ga0.47As MOSFET using a gate dielectric of Al2O3(2nmthick)∕GGO(5nmthick), a maximum drain current of 1.05A∕mm, a transconductance of 714mS∕mm, and a peak mobility of 1300cm2∕Vs have been achieved, the highest ever reported for III-V inversion-channel devices of 1μm gate length.

SDGs

[SDGs]SDG7

Type

journal article

High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectrics

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