High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectrics

Journal

Applied Physics Letters

Journal Volume

93

Journal Issue

3

Date Issued

2008

Author(s)

Lin, T.D.

Chiu, H.C.

Chang, P.

Tung, L.T.

Chen, C.P.

Kwo, J.

Tsai, W.

Wang, Y.C.

DOI

10.1063/1.2956393

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443417

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-48249114071&doi=10.1063%2f1.2956393&partnerID=40&md5=40e09a11fefa0523f874ef6116fa1ef6

SDGs

[SDGs]SDG7

Type

journal article