Publication:
The Characteristics of Silane Doping of GaAs by MOCVD

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cris.virtual.departmentPhotonics and Optoelectronicsen_US
cris.virtual.departmentElectronics Engineeringen_US
cris.virtual.departmentTSMC-NTU Joint Research Centeren_US
cris.virtual.departmentPhotonics and Optoelectronicsen_US
cris.virtual.departmentElectrical Engineeringen_US
cris.virtual.departmentElectronics Engineeringen_US
cris.virtual.departmentElectrical Engineeringen_US
cris.virtual.orcid0000-0002-3788-2030en_US
cris.virtual.orcid0000-0003-3408-6538en_US
cris.virtual.orcid0000-0003-1975-3988en_US
cris.virtualsource.departmentafcb2e83-1197-4b95-9d4a-dfafc00e7184
cris.virtualsource.departmentafcb2e83-1197-4b95-9d4a-dfafc00e7184
cris.virtualsource.departmentafcb2e83-1197-4b95-9d4a-dfafc00e7184
cris.virtualsource.departmenteec11164-f12d-4ae3-9699-d79bdb380db2
cris.virtualsource.departmenteec11164-f12d-4ae3-9699-d79bdb380db2
cris.virtualsource.departmenteec11164-f12d-4ae3-9699-d79bdb380db2
cris.virtualsource.department10881178-0424-4751-b143-4808e4b33a56
cris.virtualsource.orcidafcb2e83-1197-4b95-9d4a-dfafc00e7184
cris.virtualsource.orcideec11164-f12d-4ae3-9699-d79bdb380db2
cris.virtualsource.orcid10881178-0424-4751-b143-4808e4b33a56
dc.contributor.author劉志文zh_TW
dc.contributor.authorChen, S. L.zh_TW
dc.contributor.authorLay, J. P.zh_TW
dc.contributor.author李嗣涔zh_TW
dc.contributor.author林浩雄zh_TW
dc.contributor.authorLin, Hao-Hsiungzh_TW
dc.creator劉志文;Chen, S. L.;Lay, J. P.;李嗣涔;林浩雄zh_TW
dc.creator劉志文;Chen, S. L.;Lay, J. P.;李嗣涔;Lin, Hao-Hsiungzh_TW
dc.date1987en
dc.date.accessioned2009-02-04T21:12:26Z
dc.date.accessioned2018-07-06T11:42:02Z
dc.date.available2009-02-04T21:12:26Z
dc.date.available2018-07-06T11:42:02Z
dc.date.issued1987
dc.identifier.urihttp://ntur.lib.ntu.edu.tw//handle/246246/121624
dc.languageenen
dc.language.isoen_US
dc.relation13th EDMS, p.77-80en
dc.relation.ispartof13th EDMS
dc.relation.pages77-80
dc.titleThe Characteristics of Silane Doping of GaAs by MOCVDen
dc.typeconference paper
dspace.entity.typePublication

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