Lattice strain and in situ chemical depth profiling of nanometer-thick molecular beam epitaxy grown Y2O3 epitaxial films on Si (111)

Journal

Journal of vacuum science & technology. B, Microelectronics and nanometer structures

Journal Volume

28

Journal Issue

3

Pages

C3A17

Date Issued

2010

Author(s)

Lee, YJ

Lee, WC

Huang, ML

Wu, SY

Nieh, CW

Kwo, J

Hsu, CH

URI

Type

journal article