Record Low Contact Resistivity (4.4¡?10-10 £[-cm2) to Ge Using In-situ B and Sn Incorporation by CVD with Low Thermal Budget (?400¢XC) and Without Ga
Journal
Digest of Technical Papers - Symposium on VLSI Technology
Journal Volume
2019-June
Pages
T178-T179
Date Issued
2019
Author(s)
Type
conference paper