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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
A single nano-void precisely positioned in SiO<inf>2</inf>/Si substrate by focused helium ion beam technique
Details
A single nano-void precisely positioned in SiO2/Si substrate by focused helium ion beam technique
Journal
Vacuum
Journal Volume
152
Pages
188-192
Date Issued
2018
Author(s)
Yang, C.-W.
Chou, C.
Chen, W.-C.
HAO-HSIUNG LIN
DOI
10.1016/j.vacuum.2018.03.029
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/500394
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85044455513&doi=10.1016%2fj.vacuum.2018.03.029&partnerID=40&md5=7fa7e0f426bb2e957b8d47315ec2a339
Type
journal article