GaAs MOSFET using MBE-grown Ga 2 O 3 (Gd 2 O 3 ) as gate oxide
Journal
IEE Proceedings: Circuits, Devices and Systems
Journal Volume
145
Journal Issue
3
Pages
162-164
Date Issued
1998
Author(s)
Abstract
An enhancement mode GaAs metal-oxide-semiconductor field effect transistor (MOSFET) with Ga2O3 (Gd2O3) as gate dielectric has been successfully fabricated. The low interface density Ga2O3 (Gd2O3) oxide and GaAs n-channel layer were grown by in situ molecular beam epitaxy (MBE). The fabricated n-channel MOSFET with 20 nm-thick oxide and 2 µm-long gate operated both in enhancement and depletion modes, with a peak transconductance of 40 mS/mm in the enhancement mode. While operating with gate voltages ranging from –1 to 5 V, the device showed a drain current drift of 10.5% for a duration of 104 s, a limited amount of hysteresis and negligible dispersion of transconductance from 10 Hz to 1 MHz.
SDGs
Type
journal article