GaAs MOSFET using MBE-grown Ga 2 O 3 (Gd 2 O 3 ) as gate oxide

Journal

IEE Proceedings: Circuits, Devices and Systems

Journal Volume

145

Journal Issue

3

Pages

162-164

Date Issued

1998

Author(s)

Kim, S.-J.

Park, J.-W.

Mannaerts, J.P.

DOI

10.1049/ip-cds:19981873

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443492

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032099289&doi=10.1049%2fip-cds%3a19981873&partnerID=40&md5=a71f317d287b453185fae9e4eaf91a4c

Type

journal article