Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga2O3(Gd2O3) as gate oxide
Journal
Solid-State Electronics
Journal Volume
41
Journal Issue
11
Pages
1751-1753
Date Issued
1997
Author(s)
Ren, F.
Hobson, W.S.
Kuo, J.M.
Lothian, J.R.
Mannaerts, J.P.
Kwo, J.
Chu, S.N.G.
Chen, Y.K.
Cho, A.Y.
Abstract
We report the demonstration of both enhancement-mode p- and n-channel GaAs metal oxide semiconductor field effect transistors (MOSFETs) on GaAs semi-insulating substrates using high quality Ga2O3(Gd2O3) as the gate dielectric and the conventional ion-implant technology. The source and drain regions were selectively implanted with Zn or Si for low resistance ohmic contacts for p-or n-MOSFETs, respectively. AuBe/Pt/Au, Ge/Mo/Au-Ge/Mo/Au, and Ti/Pt/Au were deposited for p- and n-ohmic contacts and gate electrode, respectively. The devices, with a 4 × 50 μm2 gate geometry, exhibit an extrinsic transconductance of 0.18 and 0.1 mS/mm for p- and n-MOSFETs, respectively, and an excellent gate breakdown field greater than 3 MV cm-1. © 1997 Elsevier Science Ltd.
SDGs
Type
journal article