Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga2O3(Gd2O3) as gate oxide
Journal
Solid-State Electronics
Journal Volume
41
Journal Issue
11
Pages
1751-1753
Date Issued
1997
Author(s)
Ren, F.
Hobson, W.S.
Kuo, J.M.
Lothian, J.R.
Mannaerts, J.P.
Kwo, J.
Chu, S.N.G.
Chen, Y.K.
Cho, A.Y.
Type
journal article