https://scholars.lib.ntu.edu.tw/handle/123456789/443495| Title: | Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate oxide | Authors: | Ren, F. Hong, M. Hobson, W.S. Kuo, J.M. Lothian, J.R. Mannaerts, J.P. Kwo, J. Chu, S.N.G. Chen, Y.K. Cho, A.Y. MINGHWEI HONG |
Issue Date: | 1997 | Journal Volume: | 41 | Journal Issue: | 11 | Start page/Pages: | 1751-1753 | Source: | Solid-State Electronics | URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/443495 | DOI: | 10.1016/S0038-1101(97)00181-0 |
| Appears in Collections: | 物理學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.