Effect of temperature on Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors
Journal
Applied Physics Letters
Journal Volume
73
Journal Issue
26
Pages
3893-3895
Date Issued
1998
Author(s)
Abstract
Ga 2 O 3 (Gd 2 O 3 ) was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal–oxide–semiconductor field-effect transistor (MOSFET). Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal–semiconductor field-effect transistor fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 °C. Modeling of the effect of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.
SDGs
Type
journal article