Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Science / 理學院
Physics / 物理學系
Effect of temperature on Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors
Details
Effect of temperature on Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors
Journal
Applied Physics Letters
Journal Volume
73
Journal Issue
26
Pages
3893-3895
Date Issued
1998
Author(s)
Ren, F.
MINGHWEI HONG
Chu, S.N.G.
Marcus, M.A.
Schurman, M.J.
Baca, A.
Pearton, S.J.
Abernathy, C.R.
DOI
10.1063/1.122927
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443489
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032576518&doi=10.1063%2f1.122927&partnerID=40&md5=a52b3e58723df1ba73056ac1b375ad2d
Type
journal article