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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Investigation of interface property in Al/SiO2/n-SiC structure with thin gate oxide by illumination
Details
Investigation of interface property in Al/SiO2/n-SiC structure with thin gate oxide by illumination
Journal
Applied Physics A
Journal Volume
123
Journal Issue
4
Date Issued
2017-04
Author(s)
JENN-GWO HWU
DOI
10.1007/s00339-017-0897-2
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/399796
Type
journal article
