Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3 ) on Ge(100)
Journal
International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Pages
139-140
Date Issued
2009
Author(s)
Abstract
Ultra-high vacuum (UHV)-deposited high Ga 2 O 3 (Gd 2 O 3 ) was proved to passivate Ge effectively, as evidenced by comprehensive investigations including structural, chemical, and electrical analyses. The Ga 2 O 3 (Gd 2 O 3 )/Ge interface is revealed to be abrupt even being subjected to a 500degC anneal, a high kappa value of 14.5, a low leakage current density of ~10 -9 A/cm 2 with a Fowler-Nordheim tunneling behavior, and well-behaved C-V characteristics are achieved. Furthermore, Ge self-aligned pMOSFETs with Al 2 O 3 / Ga 2 O 3 (Gd 2 O 3 ) as the gate dielectrics have demonstrated a high drain current and a peak transconductance up to 252 mA/mm and 143 mS/mm, respectively, of 1 mum-gate length.
Type
conference paper