Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Science / 理學院
Physics / 物理學系
Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3 ) on Ge(100)
Details
Metal-oxide-semiconductor devices with UHV-Ga 2 O 3 (Gd 2 O 3 ) on Ge(100)
Journal
International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Pages
139-140
Date Issued
2009
Author(s)
Chu, L.K.
Lin, T.D.
Lee, C.H.
Tung, L.T.
Lee, W.C.
Chu, R.L.
Chang, C.C.
MINGHWEI HONG
Kwo, J.
DOI
10.1109/VTSA.2009.5159328
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443396
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-77950123954&doi=10.1109%2fVTSA.2009.5159328&partnerID=40&md5=94e1007663c39dc80bca8b260286e02d
Type
conference paper
