Synchrotron radiation X-ray absorption and optical studies of cubic SiC films grown on Si by chemical vapor deposition
Journal
Advanced Materials Research
Journal Volume
306-307
Pages
167-170
Date Issued
2011
Author(s)
Abstract
Synchrotron radiation extended X-ray absorption fine structure and Raman scattering were used to characterize a series of 3C-SiC films grown on Si (100) by chemical vapor deposition. EXAFS can probe the physical and chemical structure of matters at an atomic scale and Raman parameters such as intensity, width, peak frequency and polarization provide fruitful information on the crystal quality and properties of these film materials.
Type
conference paper