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College of Science / 理學院
Applied Physics / 應用物理研究所
Sub-nanometer EOT scaling on In 0.53 Ga 0.47 As with atomic layer deposited HfO 2 as gate dielectric
Details
Sub-nanometer EOT scaling on In 0.53 Ga 0.47 As with atomic layer deposited HfO 2 as gate dielectric
Journal
2008 International Symposium on VLSI Technology, Systems and Applications
Date Issued
2008
Author(s)
Lee, KY
Chang, P
Chang, YC
Huang, ML
Lee, YJ
MINGHWEI HONG
Kwo, J
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/340132
Type
book part
