Feasibility of 1.55 μm intersubband photonic devices using InGaAs/alas pseudomorphic quantum well structures
Journal
Japanese Journal of Applied Physics
Journal Volume
33
Journal Issue
1
Pages
890-895
Date Issued
1994
Author(s)
Abstract
We propose to use 1.55 μm intersubband transitions as a key mechanism for novel photonic devices such as fast photonic switches which are applicable to current optical communication systems. The calculation of carrier relaxation times shows a few picosecond switching time for 1.55 μm intersubband transitions. The well-width dependence of intersubband transition energies in InGaAs/AlAs pseudomorphic quantum well structures has been studied to realize 1.55 μm intersubband transitions. © 1994 Japanese Journal of Applied Physics. All rights reserved.
Subjects
Carrier relaxation time; Intersubband transition; Optical communication system; Photonic switch; Pseudomorphic quantum well
Other Subjects
Band structure; Charge carriers; Electron transitions; Nonlinear optics; Optical communication; Relaxation processes; Semiconducting aluminum compounds; Semiconducting indium compounds; Semiconductor device structures; Semiconductor quantum wells; Switching; Ultrafast phenomena; Carrier relaxation time; Indium gallium arsenide/aluminum arsenide; Intersubband transitions; Optical communication systems; Optical nonlinearity; Photonic devices; Pseudomorphic quantum well structures; Optical switches
Type
journal article