https://scholars.lib.ntu.edu.tw/handle/123456789/632400
標題: | Feasibility of 1.55 μm intersubband photonic devices using InGaAs/alas pseudomorphic quantum well structures | 作者: | Hirayama Y Smet J.H LUNG-HAN PENG Fonstad C.G Ippen E.P. |
關鍵字: | Carrier relaxation time; Intersubband transition; Optical communication system; Photonic switch; Pseudomorphic quantum well | 公開日期: | 1994 | 卷: | 33 | 期: | 1 | 起(迄)頁: | 890-895 | 來源出版物: | Japanese Journal of Applied Physics | 摘要: | We propose to use 1.55 μm intersubband transitions as a key mechanism for novel photonic devices such as fast photonic switches which are applicable to current optical communication systems. The calculation of carrier relaxation times shows a few picosecond switching time for 1.55 μm intersubband transitions. The well-width dependence of intersubband transition energies in InGaAs/AlAs pseudomorphic quantum well structures has been studied to realize 1.55 μm intersubband transitions. © 1994 Japanese Journal of Applied Physics. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028259385&doi=10.1143%2fJJAP.33.890&partnerID=40&md5=a600a53ca2cf04b26933d9e578bc8c50 https://scholars.lib.ntu.edu.tw/handle/123456789/632400 |
ISSN: | 214922 | DOI: | 10.1143/JJAP.33.890 | SDG/關鍵字: | Band structure; Charge carriers; Electron transitions; Nonlinear optics; Optical communication; Relaxation processes; Semiconducting aluminum compounds; Semiconducting indium compounds; Semiconductor device structures; Semiconductor quantum wells; Switching; Ultrafast phenomena; Carrier relaxation time; Indium gallium arsenide/aluminum arsenide; Intersubband transitions; Optical communication systems; Optical nonlinearity; Photonic devices; Pseudomorphic quantum well structures; Optical switches |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。