Structural, optical and electrical characteristics of silicon carbon nitride
Journal
Materials Research Society Symposium - Proceedings
Journal Volume
592
Pages
219-225
Date Issued
2000
Author(s)
Abstract
Dielectric layers of thin silicon carbon nitride (SiCxNy) films have been prepared by ion beam sputtering deposition (IBD). For submicron metal-insulator-Si (MIS) based device applications, a dielectric of low interface roughness, increased capacitance/area with lower leakage on decreasing scale is highly desirable. We address these aspects for the IBD SiCxNy films on p-type Si and present their structural, optical and electrical characteristics as a function of the deposition conditions. Ultraviolet-visible transmittance and spectroscopic ellipsometry were employed to study the optical properties of the SiCxNy films. For electrical measurements, Al gate electrodes were fabricated on SiCxNy films to form metal-nitride-silicon (MNS) diodes. Characteristic I-V and photoconductivity measurements of the MNS are presented.
Other Subjects
Capacitance;Current voltage characteristics;Deposition;Dielectric materials;Ellipsometry;MIS devices;Semiconducting silicon compounds;Sputter deposition;Structure (composition);Surface roughness;Thin films;Ion beam sputter deposition (IBD);Silicon carbon nitrides;Ultraviolet-visible transmittances;Semiconducting films
Type
conference paper