https://scholars.lib.ntu.edu.tw/handle/123456789/616433
標題: | Structural, optical and electrical characteristics of silicon carbon nitride | 作者: | Chen L.C. Wu C.T. Wen C.-Y. Wu J.-J. Liu W.T. Liu C.W. LI-CHYONG CHEN |
公開日期: | 2000 | 卷: | 592 | 起(迄)頁: | 219-225 | 來源出版物: | Materials Research Society Symposium - Proceedings | 摘要: | Dielectric layers of thin silicon carbon nitride (SiCxNy) films have been prepared by ion beam sputtering deposition (IBD). For submicron metal-insulator-Si (MIS) based device applications, a dielectric of low interface roughness, increased capacitance/area with lower leakage on decreasing scale is highly desirable. We address these aspects for the IBD SiCxNy films on p-type Si and present their structural, optical and electrical characteristics as a function of the deposition conditions. Ultraviolet-visible transmittance and spectroscopic ellipsometry were employed to study the optical properties of the SiCxNy films. For electrical measurements, Al gate electrodes were fabricated on SiCxNy films to form metal-nitride-silicon (MNS) diodes. Characteristic I-V and photoconductivity measurements of the MNS are presented. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034505573&partnerID=40&md5=debc67ce64523dd87de369fc99fb8479 https://scholars.lib.ntu.edu.tw/handle/123456789/616433 |
ISSN: | 02729172 | SDG/關鍵字: | Capacitance;Current voltage characteristics;Deposition;Dielectric materials;Ellipsometry;MIS devices;Semiconducting silicon compounds;Sputter deposition;Structure (composition);Surface roughness;Thin films;Ion beam sputter deposition (IBD);Silicon carbon nitrides;Ultraviolet-visible transmittances;Semiconducting films |
顯示於: | 凝態科學研究中心 |
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