Publication:
Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots

cris.lastimport.scopus2025-05-05T22:16:04Z
cris.virtual.departmentElectronics Engineeringen_US
cris.virtual.departmentPhotonics and Optoelectronicsen_US
cris.virtual.departmentElectrical Engineeringen_US
cris.virtual.departmentCenter for Condensed Matter Sciencesen_US
cris.virtual.departmentMediaTek-NTU Research Centeren_US
cris.virtual.departmentCenter for Artificial Intelligence and Advanced Roboticsen_US
cris.virtual.orcid0000-0002-6439-8754en_US
cris.virtualsource.department7f15833b-53b1-4391-9322-a9e63327dec3
cris.virtualsource.department7f15833b-53b1-4391-9322-a9e63327dec3
cris.virtualsource.department7f15833b-53b1-4391-9322-a9e63327dec3
cris.virtualsource.department7f15833b-53b1-4391-9322-a9e63327dec3
cris.virtualsource.department7f15833b-53b1-4391-9322-a9e63327dec3
cris.virtualsource.department7f15833b-53b1-4391-9322-a9e63327dec3
cris.virtualsource.orcid7f15833b-53b1-4391-9322-a9e63327dec3
dc.contributor.authorLee, S.W.en_US
dc.contributor.authorChen, P.S.en_US
dc.contributor.authorChien, T.Y.en_US
dc.contributor.authorChen, L.J.en_US
dc.contributor.authorChia, C.T.en_US
dc.contributor.authorCHEE-WEE LIUen_US
dc.date.accessioned2020-06-16T06:33:14Z
dc.date.available2020-06-16T06:33:14Z
dc.date.issued2006
dc.identifier.doi10.1016/j.tsf.2005.08.395
dc.identifier.scopus2-s2.0-33646105865
dc.identifier.urihttps://scholars.lib.ntu.edu.tw/handle/123456789/502092
dc.identifier.urlhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-33646105865&doi=10.1016%2fj.tsf.2005.08.395&partnerID=40&md5=283e22b8ea265769244d4748324128c3
dc.relation.ispartofThin Solid Films
dc.relation.journalissue1-2
dc.relation.journalvolume508
dc.relation.pages120-123
dc.titleGrowth of high-quality SiGe films with a buffer layer containing Ge quantum dotsen_US
dc.typejournal articleen
dspace.entity.typePublication

Files