Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs

Journal

Microelectronic Engineering

Journal Volume

88

Journal Issue

4

Pages

440-443

Date Issued

2011

Author(s)

Chang, Y.H.

Huang, M.L.

Chang, P.

Lin, C.A.

Chu, Y.J.

Chen, B.R.

Hsu, C.L.

Kwo, J.

Pi, T.W.

DOI

10.1016/j.mee.2010.09.015

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443369

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-79751524419&doi=10.1016%2fj.mee.2010.09.015&partnerID=40&md5=b513787948492431ad381e7a867b1ac1

Type

conference paper