Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)
Journal
Applied Physics Letters
Journal Volume
91
Journal Issue
20
Date Issued
2007
Author(s)
Yang, Z.K.
Lee, W.C.
Lee, Y.J.
Chang, P.
Huang, M.L.
Yu, K.L.
Tang, M.-T.
Lin, B.-H.
Hsu, C.-H.
Kwo, J.
Abstract
Cubic phase yttrium-doped HfO2 (YDH) ultrathin films were grown on Si (111) substrates by molecular beam epitaxy. Thorough structural and morphological investigations by x-ray scattering and transmission electron microscopy reveal that the YDH thin films are epitaxially grown on the Si substrates with (111)YDH‖(111)Si and [101¯]YDH‖[11¯0]Si. The interface between YDH and Si is atomistic sharp and free of interfacial layer. We have also determined the yttrium content of YDH films to be 19% by using anomalous x-ray diffraction (AXD) across Y k edge and angle resolved x-ray photoelectron spectroscopy (AR-XPS). The agreement between the AXD and AR-XPS results manifests that the incorporated Y atoms homogeneously substitute Hf atoms in the crystalline lattice and form a substitutional solid solution.
Type
journal article