Highly thermally stable and reproducible of ALD RuO2 nanocrystal floating gate memory devices with large memory window and good retention
Journal
International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Pages
50-51
Date Issued
2008
Author(s)
Maikap, S.
Banerjee, W.
Tzeng, P.-J.
Wang, T.-Y.
Lin, C.H.
Tien, T.C.
Lee, L.S.
Yang, J.-R.
Kao, M.-J.
Tsai, M.-J.
Type
conference paper