Initial growth of Ga 2 O 3 (Gd 2 O 3 ) on GaAs: Key to the attainment of a low interfacial density of states
Journal
Applied Physics Letters
Journal Volume
76
Journal Issue
3
Pages
312-314
Date Issued
2000
Author(s)
Lu, Z.H.
Kwo, J.
Kortan, A.R.
Mannaerts, J.P.
Krajewski, J.J.
Hsieh, K.C.
Chou, L.J.
Cheng, K.Y.
SDGs
Type
journal article