Initial growth of Ga 2 O 3 (Gd 2 O 3 ) on GaAs: Key to the attainment of a low interfacial density of states
Journal
Applied Physics Letters
Journal Volume
76
Journal Issue
3
Pages
312-314
Date Issued
2000
Author(s)
Lu, Z.H.
Kwo, J.
Kortan, A.R.
Mannaerts, J.P.
Krajewski, J.J.
Hsieh, K.C.
Chou, L.J.
Cheng, K.Y.
Abstract
Growth of the first few layers of an oxide mixture Ga2O3(Gd2O3) on GaAs (100) substrate, electron-beam evaporated from a Ga5Go3O12 source, was found to be a single crystal. Reflection high-energy electron diffraction and x-ray diffraction studies show that the thin oxide film is epitaxially grown on GaAs with the surface normal (110) and in-plane axis [001] parallel to (100) and [011] of GaAs, respectively, and has a structure isomorphic to Mn2O3. Studies using high-resolution transmission electron microscopy on the oxide-GaAs interface indicate some atomic registry between the oxide and GaAs during the initial growth. The chemical composition of the oxide film was determined by x-ray photoelectron spectroscopy to be unequivocally pure Gd2O3. © 2000 American Institute of Physics.
SDGs
Type
journal article