A Novel 0.7V Two-Port 6T SRAM Memory Cell Structure with Single-Bit-Line Simultaneous Read-and-Write Access (SBLSRWA) Capability using Partially Depleted SOI Dynamic-Threshold Technique
Journal
IEEE International SOI Conference Proceedings
Pages
75-76
Date Issued
1999-10
Author(s)
Abstract
Summary form only given. This paper reports a novel low-voltage two-port 6T SRAM memory cell structure with single-bit-line simultaneous read-and-write access capability using a partially-depleted SOI CMOS dynamic-threshold technique. With an innovative approach connecting the body terminal of an NMOS device in the latch and the write access pass transistor to the write word line, this 6T memory cell can be used to provide SBLSRWA capability for 0.7 V two-port SOI CMOS VLSI SRAM, as verified by MEDICI results.
SDGs
Type
conference paper