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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect
Details
Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect
Journal
Microelectronics Reliability
Journal Volume
50
Journal Issue
5
Pages
607-609
Date Issued
2010-05
Author(s)
H. J. Hung
J. B. Kuo
D. Chen
C. S. Yeh
JAMES-B KUO
DOI
10.1016/j.microrel.2010.01.015
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/359228
Type
journal article
