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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETs
Details
The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETs
Journal
IEEE Transactions on Nanotechnology
Journal Volume
14
Journal Issue
4
Pages
657
Date Issued
2015
Author(s)
M. H.Liao
P.-G. Chen
DOI
10.1109/TNANO.2015.2428698
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/404502
SDGs
[SDGs]SDG7
Type
journal article
