The demonstration of dislocation-stress memorization technique stressor on Si n-FinFETs
Journal
IEEE Transactions on Nanotechnology
Journal Volume
14
Journal Issue
4
Pages
657
Date Issued
2015
Author(s)
P.-G. Chen
Abstract
The dislocation stress memorization technique (D-SMT) stressor is demonstrated to boost the device performance on the Si three-dimensional (3-D) FinFET device. The larger channel stress and mobility enhancement ratio are observed in the narrower gate width device, due to the effect of triple crystal re-growth directions on the 3-D FinFET device. In this paper, ~33% mobility enhancement and ~23% Id,sat improvement on the Si FinFET device with W/L of 100/60 nm are achieved successfully with the implement of D-SMT stressor.
SDGs
Type
journal article