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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
A High ION/IOFF Ratio of 6 × 105 in Germanium-Tin n+/p Junctions by Phosphorus Ion Implantation
Details
A High ION/IOFF Ratio of 6 × 105 in Germanium-Tin n+/p Junctions by Phosphorus Ion Implantation
Journal
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Pages
142-144
Date Issued
2019
Author(s)
Liu, J.-Y.
Chuang, Y.
Liu, C.-Y.
Luo, G.-L.
JIUN-YUN LI
DOI
10.1109/EDTM.2019.8731032
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/498460
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85067820725&doi=10.1109%2fEDTM.2019.8731032&partnerID=40&md5=e774894530b77e039a2c38dd8898d020
Type
conference paper