Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 with High Data Retention and Read Endurance for 1T Memory Applications
Journal
IEEE Electron Device Letters
Journal Volume
40
Journal Issue
3
Pages
399-402
Date Issued
2019
Author(s)
Chen, K.-T.
Chen, H.-Y.
Liao, C.-Y.
Siang, G.-Y.
Lo, C.
Liao, M.-H.
Li, K.-S.
Chang, S.T.
Lee, M.H.
Type
journal article