Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5Zr0.5O2 with High Data Retention and Read Endurance for 1T Memory Applications
Journal
IEEE Electron Device Letters
Journal Volume
40
Journal Issue
3
Pages
399-402
Date Issued
2019
Author(s)
Chen, K.-T.
Chen, H.-Y.
Liao, C.-Y.
Siang, G.-Y.
Lo, C.
Liao, M.-H.
Li, K.-S.
Chang, S.T.
Lee, M.H.
Abstract
FeFETs with 5-nm-thick Hf 0.5 Zr 0.5 O 2 (HZO) have been demonstrated in memory operations for the ON/OFF current ratio >10 4 at zero gate voltage and a memory window (MW) of 0.6-0.7 V. A gradual transition of the ferroelectricity with an increasing crystallization temperature for the gate-last process was presented. The excellent data retention are the ~2×10 4 ON/OFF ratio and 0.67 V extrapolated to ten years with VP/E = ±4.8 V. The MW remains >0.2 V after 10 6 cycles for read and vanishes with cycles of 10 3 -10 4 for write, which is the bottleneck for ferroelectric (FE)-type memories. The mechanism of retention and endurance is discussed. The characteristic of this letter is an unaffected coercive-field (~1 MV/cm) with scaling FE-HZO down to 5-nm thickness, which is beneficial for reducing the operation voltage. A comparable performance with thick HZO (>5 nm) on high data retention and endurance with low voltage for read is achieved. The ultrathin FE layer proposes a realistic emerging memory for 1T architecture.
SDGs
Type
journal article