Al0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates

Journal

Applied Physics Letters

Journal Volume

89

Journal Issue

13

Date Issued

2006

Author(s)

DOI

10.1063/1.2357005

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-33749260490&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/322878

Type

journal article