Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes

Journal

Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur

Journal Volume

18

Journal Issue

3

Pages

1453-1456

Date Issued

2000

Author(s)

Anselm, KA

Kwo, J

Ng, HM

Baillargeon, JN

Kortan, AR

Mannaerts, JP

Cho, AY

Lee, CM

Chyi, JI

others

URI

Type

journal article