CMOS-compatible GaN HEMT on 200mm Si-substrate for RF application
Journal
VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
Date Issued
2021
Author(s)
Yeh, Po-Chun
Tu, Po-Tsung
Liu, Hsueh-Hsing
Hsu, Chien-Hua
Yang, Hsin-Yun
Fu, Yi-Keng
Lee, Li-Heng
Tzeng, Pei-Jer
Sheu, Shyh-Shyuan
Lo, Wei-Chung
Abstract
In this work, we successfully fabricated AlGaN/GaN HEMT on 8-inch GaN-on-Si wafer utilizing CMOS BEOL compatible process, and demonstrate an AlGaN/GaN HEMT with Lg = 250nm reaching ft/fmax = 50/44 GHz. By semi-automatic RF measurements mapping in complete 8-inch wafer area, results exhibit average ft = 48GHz with NU = 7.6% and average fmax = 42GHz with NU = 5%, revealing the outstanding uniformity of 8-inch standard CMOS manufacturing tools. ? 2021 IEEE.
Subjects
Aluminum gallium nitride; CMOS integrated circuits; Gallium nitride; III-V semiconductors; Silicon compounds; Silicon wafers; VLSI circuits; AlGaN/GaN HEMTs; CMOS Compatible; Compatible process; RF applications; RF measurements; Semi-automatics; Si substrates; Standard CMOS; High electron mobility transistors
SDGs
Type
conference paper