https://scholars.lib.ntu.edu.tw/handle/123456789/581272
標題: | CMOS-compatible GaN HEMT on 200mm Si-substrate for RF application | 作者: | Yeh, Po-Chun Tu, Po-Tsung Liu, Hsueh-Hsing Hsu, Chien-Hua Yang, Hsin-Yun Fu, Yi-Keng Lee, Li-Heng Tzeng, Pei-Jer YUH-RENN WU Sheu, Shyh-Shyuan Lo, Wei-Chung Wu, Chih-I |
關鍵字: | Aluminum gallium nitride; CMOS integrated circuits; Gallium nitride; III-V semiconductors; Silicon compounds; Silicon wafers; VLSI circuits; AlGaN/GaN HEMTs; CMOS Compatible; Compatible process; RF applications; RF measurements; Semi-automatics; Si substrates; Standard CMOS; High electron mobility transistors | 公開日期: | 2021 | 來源出版物: | VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings | 摘要: | In this work, we successfully fabricated AlGaN/GaN HEMT on 8-inch GaN-on-Si wafer utilizing CMOS BEOL compatible process, and demonstrate an AlGaN/GaN HEMT with Lg = 250nm reaching ft/fmax = 50/44 GHz. By semi-automatic RF measurements mapping in complete 8-inch wafer area, results exhibit average ft = 48GHz with NU = 7.6% and average fmax = 42GHz with NU = 5%, revealing the outstanding uniformity of 8-inch standard CMOS manufacturing tools. ? 2021 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85108165120&doi=10.1109%2fVLSI-TSA51926.2021.9440075&partnerID=40&md5=0e1110583b3f1d3c637d4a7fdf25d509 https://scholars.lib.ntu.edu.tw/handle/123456789/581272 |
DOI: | 10.1109/VLSI-TSA51926.2021.9440075 |
顯示於: | 電機工程學系 |
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