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College of Electrical Engineering and Computer Science / 電機資訊學院
Photonics and Optoelectronics / 光電工程學研究所
Device scaling physics and channel velocities in AlGaN/GaN HFETs: Velocities and effective gate length
Details
Device scaling physics and channel velocities in AlGaN/GaN HFETs: Velocities and effective gate length
Journal
IEEE Transactions on Electron Devices
Journal Volume
53
Journal Issue
4
Pages
588-593
Date Issued
2006
Author(s)
YUH-RENN WU
Singh, M
Singh, J
DOI
10.1109/TED.2006.870571
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/321642
SDGs
[SDGs]SDG7
Type
journal article
