Inversion n-channel GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as gate dielectrics

Journal

Device Research Conference

Pages

81-82

Date Issued

2008

Author(s)

Chang, Y.C.

Chang, W.H.

Chiu, H.C.

Shiu, K.H.

Lee, C.H.

Kwo, J.

Hong, J.M.

Tsai, C.C.

DOI

10.1109/DRC.2008.4800744

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443413

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-64849084605&doi=10.1109%2fDRC.2008.4800744&partnerID=40&md5=466325f5dfc4aa09e95d22961c92c1bd

Type

conference paper