Inversion n-channel GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as gate dielectrics
Journal
Device Research Conference
Pages
81-82
Date Issued
2008
Author(s)
Abstract
In this paper, inversion n-channel GaN MOSFETs using atomic-layer-deposited (ALD) Al2O3 as a high k gate dielectric is demonstrated for the first time electrical performance close to those of the silicon based MOSFET. Device performance are markedly improved compared to the previous results of GaN MOSFETs with high k dielectrics.
Type
conference paper