Hole effective mass of strained Ge 1-x Sn x alloys P-channel quantum-well MOSFETs on (001), (110), and (111) Ge substrates

Journal

ECS Transactions

Journal Volume

75

Journal Issue

8

Pages

571-578

Date Issued

2016

Author(s)

Lan, H.-S.

DOI

10.1149/07508.0571ecst

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/502132

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84991641355&doi=10.1149%2f07508.0571ecst&partnerID=40&md5=038a86ed92846c80658060675f72bf8b

Type

conference paper