Hole effective mass of strained Ge 1-x Sn x alloys P-channel quantum-well MOSFETs on (001), (110), and (111) Ge substrates
Journal
ECS Transactions
Journal Volume
75
Journal Issue
8
Pages
571-578
Date Issued
2016
Author(s)
Lan, H.-S.
Abstract
The dependence of effective mass on Sn content, pseudomorphic strain, cap layer thickness, and substrate orientation is theoretically studied for Ge-cap/Ge 1- x Sn x /Ge substrate p -channel MOSFETs through six-band k·p method. The Luttinger-like and deformation potential parameters were obtained from the fit of Ge 1- x Sn x band structures by the empirical pseudopotential method. The valence band alignment is theoretically determined by the empirical pseudopotential method and the model-solid theory. The high Sn content and thin Ge-cap layer both result the small effective mass at zone center along channel direction of the first subband.
Type
conference paper