High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy

Journal

Solid State Electronics

Journal Volume

38

Journal Issue

1

Pages

25-29

Date Issued

1995

Author(s)

Sun, T.P.

Huang, C.L.

DOI

10.1016/0038-1101(94)E0070-U

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0029234881&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/316533

SDGs

[SDGs]SDG7

Type

journal article