AlN epitaxy on SiC by low-temperature atomic layer deposition: Via layer-by-layer, in situ atomic layer annealing

Journal

RSC Advances

Journal Volume

9

Journal Issue

22

Pages

12226-12231

Date Issued

2019

Author(s)

Kao W.-C.

Lee W.-H.

Yi S.-H.

Shen T.-H.

DOI

10.1039/c9ra00008a

URI

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85064971714&doi=10.1039%2fc9ra00008a&partnerID=40&md5=da333ddda612d782d373a155172e46a1

https://scholars.lib.ntu.edu.tw/handle/123456789/432405

Publisher

Royal Society of Chemistry

Type

journal article