Characteristics of ALD high-�e HfAlOx nanocrystals in memory capacitors annealed at high temperatures
Journal
ECS Transactions
Journal Volume
33
Journal Issue
3
Pages
347-353
Date Issued
2010
Author(s)
Abstract
Nanoscale (EOT=9.3 nm) nonvolatile memory capacitors by using atomic layer deposited high-k HfAlOx nanocrystals have been investigated. The high-k HfAlOx nanocrystals have been investigated by TEM, EDX and XPS. Due to the charge confinement in the high-k HfAlOx nanocrystals a memory window of 0.7V can be observed after 10 days of retention.
Type
conference paper