Gate-bias stress stability of P-type SnO thin-film transistors fabricated by RF-sputtering

Journal

IEEE Electron Device Letters

Journal Volume

35

Journal Issue

1

Pages

90-92

Date Issued

2014

Author(s)

Chiu, I.-C.

Cheng, I.-C.

DOI

10.1109/LED.2013.2291896

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-84891529953&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/387137

Type

journal article